- 您现在的位置：买卖IC网 > Sheet目录368 > W19B320ATT7H (Winbond Electronics)IC FLASH 32MBIT 70NS 48TSOP
W19B320AT/B
8.10 Alternate #CE Controlled Erase an d Program Operations
70 NS
PARAMETER
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recover Time Before Write (#OE High
to #WE Low)
#WE Setup Time
#WE Hold Time
#CE Pulse Width
#CE Pulse Width High
SYM.
TWC
TAS
TAH
TDS
TDH
TGHEL
TWS
TWH
TCP
TCPH
MIN.
70
0
45
35
0
0
0
0
30
30
TYPICAL
(NOTE3)
-
-
-
-
-
-
-
-
-
-
MAX.
(NOTE4)
-
-
-
-
-
-
-
-
-
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Programming Time (Note 6)
Accelerated Programming
Time (Note 6)
Sector Erase Time (Note 2)
Chip Erase Time (Note 2)
Chip Program Time (Note 5)
Byte
Word
Byte
Word
Byte
Word
TPB
TPW
TACCP
TSE
TCE
TCPB
T CPW
-
-
-
-
-
-
-
5
7
4
0.4
49
21
14
150
210
120
15
-
63
42
μ s
μ s
sec
sec
sec
Notes:
1. Not 100 % tested.
2. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
3. Typical program and erase time assume the following conditions :25 ℃ ,3.0 V V DD , 100,000 cycles .Additionally,
programming typicals assume checkerboard pattern.
4. Under worst case conditions of 90 ℃ , V DD =2.7V, 100,000 cycles.
5. The typical chip programming time is considerably less than the maximun chip programming time listed,since most
bytes program faster than maximun program times listed.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Publication Release Date: December 27, 2005
- 41 -
Revision A4
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
W19B320BTT7H
IC FLASH 32MBIT 70NS 48TSOP
W25Q128BVEIG
IC SPI FLASH 128MBIT 8WSON
W25Q16BVSFIG
IC SPI FLASH 16MBIT 16SOIC
W25Q16CVSFIG
IC SPI FLASH 16MBIT 16SOIC
W25Q16DWSFIG
IC FLASH SPI 16MBIT 16SOIC
W25Q16VSFIG
IC FLASH 16MBIT 80MHZ 16SOIC
W25Q32BVZPIG
IC SPI FLASH 32MBIT 8WSON
W25Q32DWZEIG
IC FLASH SPI 32MBIT 8WSON
相关代理商/技术参数
W19B320B
制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB
制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB-H
制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BB-M
制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT
制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BT-H
制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT-M
制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BTT7H
功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ